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SI3430DV-T1-E3

Vishay Siliconix

Product No:

SI3430DV-T1-E3

Manufacturer:

Vishay Siliconix

Package:

6-TSOP

Batch:

Datasheet:

Description:

MOSFET N-CH 100V 1.8A 6TSOP

Quantity:

Delivery:

Payment:

In Stock : 7824

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.14

$1.14
10

$1.01935

$10.1935
100

$0.794485

$79.4485
500

$0.656298

$328.149
1000

$0.51813

$518.13

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.6 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	170mOhm @ 2.4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA (Min)
Supplier Device Package	6-TSOP
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	1.14W (Ta)
Series	-
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1.8A (Ta)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	SI3430