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SI3475DV-T1-E3

Vishay Siliconix

Product No:

SI3475DV-T1-E3

Manufacturer:

Vishay Siliconix

Package:

6-TSOP

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Description:

MOSFET P-CH 200V 950MA 6TSOP

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	500 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.61Ohm @ 900mA, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	6-TSOP
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	2W (Ta), 3.2W (Tc)
Series	TrenchFET®
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	950mA (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	SI3475