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SI3812DV-T1-E3

Vishay Siliconix

Product No:

SI3812DV-T1-E3

Manufacturer:

Vishay Siliconix

Package:

6-TSOP

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Description:

MOSFET N-CH 20V 2A 6TSOP

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	125mOhm @ 2.4A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	600mV @ 250µA (Min)
Supplier Device Package	6-TSOP
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	830mW (Ta)
Series	LITTLE FOOT®
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Mfr	Vishay Siliconix
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI3812