Home / Single FETs, MOSFETs / SI4101DY-T1-GE3

SI4101DY-T1-GE3

Vishay Siliconix

Product No:

SI4101DY-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

8-SOIC

Batch:

Datasheet:

Description:

MOSFET P-CH 30V 25.7A 8SO

Quantity:

Delivery:

Payment:

In Stock : 13165

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.8265

$0.8265
10

$0.72865

$7.2865
100

$0.558315

$55.8315
500

$0.44137

$220.685
1000

$0.353096

$353.096

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for SI4101DY-T1-GE3, please feel free to contact us. To facilitate the processing of your inquiry, kindly include SI4101DY-T1-GE3 and the required quantity in your RFQ. IICSEMI provides the latest quote for SI4101DY-T1-GE3 without requiring registration. Latest information on SI4101DY-T1-GE3: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs SI4101DY-T1-GE3 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	8190 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	203 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	6mOhm @ 15A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-SOIC
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	6W (Tc)
Series	TrenchFET®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	25.7A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SI4101