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SI4425BDY-T1-GE3

Vishay Siliconix

Product No:

SI4425BDY-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

8-SOIC

Batch:

Datasheet:

Description:

MOSFET P-CH 30V 8.8A 8SO

Quantity:

Delivery:

Payment:

In Stock : 2980

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.786

$1.786
10

$1.6017

$16.017
100

$1.287535

$128.7535
500

$1.057844

$528.922
1000

$0.876508

$876.508

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	100 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	12mOhm @ 11.4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	8-SOIC
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	1.5W (Ta)
Series	TrenchFET®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	8.8A (Ta)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SI4425