Home / Single FETs, MOSFETs / SI4774DY-T1-GE3

SI4774DY-T1-GE3

Vishay Siliconix

Product No:

SI4774DY-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

8-SOIC

Batch:

Datasheet:

Description:

MOSFET N-CHANNEL 30V 16A 8SO

Quantity:

Delivery:

Payment:

In Stock : 10

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.3705

$0.3705
10

$0.28595

$2.8595

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for SI4774DY-T1-GE3, please feel free to contact us. To facilitate the processing of your inquiry, kindly include SI4774DY-T1-GE3 and the required quantity in your RFQ. IICSEMI provides the latest quote for SI4774DY-T1-GE3 without requiring registration. Latest information on SI4774DY-T1-GE3: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs SI4774DY-T1-GE3 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TA)
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1025 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	14.3 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	9.5mOhm @ 10A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.3V @ 1mA
Supplier Device Package	8-SOIC
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	5W (Tc)
Series	SkyFET®, TrenchFET®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SI4774