SI4876DY-T1-GE3
Vishay Siliconix
Product No:
SI4876DY-T1-GE3
Manufacturer:
Package:
8-SOIC
Batch:
-
Datasheet:
Description:
MOSFET N-CH 20V 14A 8SO
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 4.5 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 21A, 4.5V |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
| Drain to Source Voltage (Vdss) | 20 V |
| Power Dissipation (Max) | 1.6W (Ta) |
| Series | TrenchFET® |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±12V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Package | Tape & Reel (TR) |
| Base Product Number | SI4876 |
Detail Info
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SI4876DY-T1-GE3 Tags
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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