Home / FET, MOSFET Arrays / SI4963BDY-T1-GE3

SI4963BDY-T1-GE3

Vishay Siliconix

Product No:

SI4963BDY-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

8-SOIC

Batch:

Datasheet:

Description:

MOSFET 2P-CH 20V 4.9A 8SOIC

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for SI4963BDY-T1-GE3, please feel free to contact us. To facilitate the processing of your inquiry, kindly include SI4963BDY-T1-GE3 and the required quantity in your RFQ. IICSEMI provides the latest quote for SI4963BDY-T1-GE3 without requiring registration. Latest information on SI4963BDY-T1-GE3: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs SI4963BDY-T1-GE3 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	-
Gate Charge (Qg) (Max) @ Vgs	21nC @ 4.5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	32mOhm @ 6.5A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1.4V @ 250µA
Supplier Device Package	8-SOIC
Drain to Source Voltage (Vdss)	20V
Series	-
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Power - Max	1.1W
Current - Continuous Drain (Id) @ 25°C	4.9A
Mfr	Vishay Siliconix
Package	Tape & Reel (TR)
Base Product Number	SI4963