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SI4966DY-T1-GE3

Vishay Siliconix

Product No:

SI4966DY-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

8-SOIC

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Description:

MOSFET 2N-CH 20V 8SOIC

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	-
Gate Charge (Qg) (Max) @ Vgs	50nC @ 4.5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	25mOhm @ 7.1A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1.5V @ 250µA
Supplier Device Package	8-SOIC
Drain to Source Voltage (Vdss)	20V
Series	TrenchFET®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Power - Max	2W
Current - Continuous Drain (Id) @ 25°C	-
Mfr	Vishay Siliconix
Package	Tape & Reel (TR)
Base Product Number	SI4966