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SI5402DC-T1-E3

Vishay Siliconix

Product No:

SI5402DC-T1-E3

Manufacturer:

Vishay Siliconix

Package:

1206-8 ChipFET™

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Datasheet:

Description:

MOSFET N-CH 30V 4.9A 1206-8

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	35mOhm @ 4.9A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1V @ 250µA (Min)
Supplier Device Package	1206-8 ChipFET™
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	1.3W (Ta)
Series	TrenchFET®
Package / Case	8-SMD, Flat Lead
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4.9A (Ta)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SI5402