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SI5406DC-T1-GE3

Vishay Siliconix

Product No:

SI5406DC-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

1206-8 ChipFET™

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 12V 6.9A 1206-8

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 20mOhm @ 6.9A, 4.5V
Product Status Obsolete
Vgs(th) (Max) @ Id 600mV @ 1.2mA (Min)
Supplier Device Package 1206-8 ChipFET™
Drain to Source Voltage (Vdss) 12 V
Power Dissipation (Max) 1.3W (Ta)
Series TrenchFET®
Package / Case 8-SMD, Flat Lead
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 6.9A (Ta)
Mfr Vishay Siliconix
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Package Tape & Reel (TR)
Base Product Number SI5406

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