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SI5411EDU-T1-GE3

Vishay Siliconix

Product No:

SI5411EDU-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® ChipFet Single

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Description:

MOSFET P-CH 12V 25A PPAK

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Operating Temperature	-50°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	4100 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs	105 nC @ 8 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8.2mOhm @ 6A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	900mV @ 250µA
Supplier Device Package	PowerPAK® ChipFet Single
Drain to Source Voltage (Vdss)	12 V
Power Dissipation (Max)	3.1W (Ta), 31W (Tc)
Series	TrenchFET®
Package / Case	PowerPAK® ChipFET™ Single
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI5411