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SI5475DDC-T1-GE3

Vishay Siliconix

Product No:

SI5475DDC-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

1206-8 ChipFET™

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Datasheet:

Description:

MOSFET P-CH 12V 6A 1206-8

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1600 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 8 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	32mOhm @ 5.4A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	1206-8 ChipFET™
Drain to Source Voltage (Vdss)	12 V
Power Dissipation (Max)	2.3W (Ta), 5.7W (Tc)
Series	TrenchFET®
Package / Case	8-SMD, Flat Lead
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI5475