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SI5511DC-T1-E3

Vishay Siliconix

Product No:

SI5511DC-T1-E3

Manufacturer:

Vishay Siliconix

Package:

1206-8 ChipFET™

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Description:

MOSFET N/P-CH 30V 4A 1206-8

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	435pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	7.1nC @ 5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	55mOhm @ 4.8A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	1206-8 ChipFET™
Drain to Source Voltage (Vdss)	30V
Series	TrenchFET®
Package / Case	8-SMD, Flat Lead
Technology	MOSFET (Metal Oxide)
Power - Max	3.1W, 2.6W
Current - Continuous Drain (Id) @ 25°C	4A, 3.6A
Mfr	Vishay Siliconix
Package	Tape & Reel (TR)
Base Product Number	SI5511