Home / FET, MOSFET Arrays / SI5515CDC-T1-E3

SI5515CDC-T1-E3

Vishay Siliconix

Product No:

SI5515CDC-T1-E3

Manufacturer:

Vishay Siliconix

Package:

1206-8 ChipFET™

Batch:

Datasheet:

Description:

MOSFET N/P-CH 20V 4A 1206-8

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for SI5515CDC-T1-E3, please feel free to contact us. To facilitate the processing of your inquiry, kindly include SI5515CDC-T1-E3 and the required quantity in your RFQ. IICSEMI provides the latest quote for SI5515CDC-T1-E3 without requiring registration. Latest information on SI5515CDC-T1-E3: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs SI5515CDC-T1-E3 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	632pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	11.3nC @ 5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	36mOhm @ 6A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	800mV @ 250µA
Supplier Device Package	1206-8 ChipFET™
Drain to Source Voltage (Vdss)	20V
Series	TrenchFET®
Package / Case	8-SMD, Flat Lead
Technology	MOSFET (Metal Oxide)
Power - Max	3.1W
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Mfr	Vishay Siliconix
Package	Tape & Reel (TR)
Base Product Number	SI5515