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SI5855CDC-T1-E3

Vishay Siliconix

Product No:

SI5855CDC-T1-E3

Manufacturer:

Vishay Siliconix

Package:

1206-8 ChipFET™

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Description:

MOSFET P-CH 20V 3.7A 1206-8

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	276 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	6.8 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	144mOhm @ 2.5A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	1206-8 ChipFET™
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	1.3W (Ta), 2.8W (Tc)
Series	LITTLE FOOT®
Package / Case	8-SMD, Flat Lead
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3.7A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI5855