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SI7366DP-T1-E3

Vishay Siliconix

Product No:

SI7366DP-T1-E3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

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Description:

MOSFET N-CH 20V 13A PPAK SO-8

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5.5mOhm @ 20A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	PowerPAK® SO-8
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	1.7W (Ta)
Series	TrenchFET®
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	13A (Ta)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SI7366