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SI7403BDN-T1-E3

Vishay Siliconix

Product No:

SI7403BDN-T1-E3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8

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Description:

MOSFET P-CH 20V 8A PPAK1212-8

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 8 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	74mOhm @ 5.1A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	PowerPAK® 1212-8
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	3.1W (Ta), 9.6W (Tc)
Series	TrenchFET®
Package / Case	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI7403