Home / Single FETs, MOSFETs / SI7703EDN-T1-E3

SI7703EDN-T1-E3

Vishay Siliconix

Product No:

SI7703EDN-T1-E3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8

Batch:

Datasheet:

Description:

MOSFET P-CH 20V 4.3A PPAK1212-8

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for SI7703EDN-T1-E3, please feel free to contact us. To facilitate the processing of your inquiry, kindly include SI7703EDN-T1-E3 and the required quantity in your RFQ. IICSEMI provides the latest quote for SI7703EDN-T1-E3 without requiring registration. Latest information on SI7703EDN-T1-E3: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs SI7703EDN-T1-E3 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	48mOhm @ 6.3A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 800µA
Supplier Device Package	PowerPAK® 1212-8
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	1.3W (Ta)
Series	TrenchFET®
Package / Case	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4.3A (Ta)
Mfr	Vishay Siliconix
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI7703