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SI8805EDB-T2-E1

Vishay Siliconix

Product No:

SI8805EDB-T2-E1

Manufacturer:

Vishay Siliconix

Package:

4-Microfoot

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Datasheet:

Description:

MOSFET P-CH 8V 4MICROFOOT

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	68mOhm @ 1.5A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	700mV @ 250µA
Supplier Device Package	4-Microfoot
Drain to Source Voltage (Vdss)	8 V
Power Dissipation (Max)	500mW (Ta)
Series	TrenchFET®
Package / Case	4-XFBGA, CSPBGA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.2A (Ta)
Mfr	Vishay Siliconix
Vgs (Max)	±5V
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI8805