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SI8812DB-T2-E1

Vishay Siliconix

Product No:

SI8812DB-T2-E1

Manufacturer:

Vishay Siliconix

Package:

4-Microfoot

Batch:

Datasheet:

Description:

MOSFET N-CH 20V 4MICROFOOT

Quantity:

Delivery:

Payment:

In Stock : 2690

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.399

$0.399
10

$0.3401

$3.401
100

$0.25384

$25.384
500

$0.199481

$99.7405
1000

$0.154147

$154.147

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 8 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	59mOhm @ 1A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	4-Microfoot
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	500mW (Ta)
Series	TrenchFET®
Package / Case	4-UFBGA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.3A (Ta)
Mfr	Vishay Siliconix
Vgs (Max)	±5V
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI8812