Home / Single FETs, MOSFETs / SI8816EDB-T2-E1

SI8816EDB-T2-E1

Vishay Siliconix

Product No:

SI8816EDB-T2-E1

Manufacturer:

Vishay Siliconix

Package:

4-Microfoot

Batch:

Datasheet:

Description:

MOSFET N-CH 30V 4MICROFOOT

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for SI8816EDB-T2-E1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include SI8816EDB-T2-E1 and the required quantity in your RFQ. IICSEMI provides the latest quote for SI8816EDB-T2-E1 without requiring registration. Latest information on SI8816EDB-T2-E1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs SI8816EDB-T2-E1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	195 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	109mOhm @ 1A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	1.4V @ 250µA
Supplier Device Package	4-Microfoot
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	500mW (Ta)
Series	TrenchFET®
Package / Case	4-XFBGA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1.5A (Ta)
Mfr	Vishay Siliconix
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SI8816