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SIE882DF-T1-GE3

Vishay Siliconix

Product No:

SIE882DF-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

10-PolarPAK® (L)

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 25V 60A 10POLARPAK

Quantity:

Delivery:

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In Stock : 2760

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.2895

    $2.2895

  • 10

    $2.0596

    $20.596

  • 100

    $1.65547

    $165.547

  • 500

    $1.360096

    $680.048

  • 1000

    $1.126928

    $1126.928

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 6400 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.4mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 250µA
Supplier Device Package 10-PolarPAK® (L)
Drain to Source Voltage (Vdss) 25 V
Power Dissipation (Max) 5.2W (Ta), 125W (Tc)
Series TrenchFET®
Package / Case 10-PolarPAK® (L)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SIE882

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