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SIHB120N60E-GE3

Vishay Siliconix

Product No:

SIHB120N60E-GE3

Manufacturer:

Vishay Siliconix

Package:

D²PAK (TO-263)

Batch:

Datasheet:

Description:

MOSFET N-CH 600V 25A D2PAK

Quantity:

Delivery:

Payment:

In Stock : 913

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$4.788

$4.788
10

$4.0204

$40.204
100

$3.252135

$325.2135
500

$2.890774

$1445.387
1000

$2.475234

$2475.234
2000

$2.330692

$4661.384

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1562 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	120mOhm @ 12A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	D²PAK (TO-263)
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	179W (Tc)
Series	E
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	SIHB120