Home / Single FETs, MOSFETs / SIHB18N60E-GE3

SIHB18N60E-GE3

Vishay Siliconix

Product No:

SIHB18N60E-GE3

Manufacturer:

Vishay Siliconix

Package:

TO-263 (D²Pak)

Batch:

Datasheet:

Description:

MOSFET N-CH 600V 18A TO263

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for SIHB18N60E-GE3, please feel free to contact us. To facilitate the processing of your inquiry, kindly include SIHB18N60E-GE3 and the required quantity in your RFQ. IICSEMI provides the latest quote for SIHB18N60E-GE3 without requiring registration. Latest information on SIHB18N60E-GE3: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs SIHB18N60E-GE3 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1640 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	92 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	202mOhm @ 9A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-263 (D²Pak)
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	179W (Tc)
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	SIHB18