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SIHB24N80AE-GE3

Vishay Siliconix

Product No:

SIHB24N80AE-GE3

Manufacturer:

Vishay Siliconix

Package:

D²PAK (TO-263)

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 800V 21A D2PAK

Quantity:

Delivery:

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Payment:

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In Stock : 999

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.249

    $3.249

  • 10

    $2.7284

    $27.284

  • 100

    $2.20723

    $220.723

  • 500

    $1.961978

    $980.989

  • 1000

    $1.679952

    $1679.952

  • 2000

    $1.581854

    $3163.708

  • 5000

    $1.517625

    $7588.125

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1836 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 89 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 184mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package D²PAK (TO-263)
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 208W (Tc)
Series -
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±30V
Package Tube
Base Product Number SIHB24

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