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SIHFBE30S-GE3

Vishay Siliconix

Product No:

SIHFBE30S-GE3

Manufacturer:

Vishay Siliconix

Package:

D²PAK (TO-263)

Batch:

Datasheet:

Description:

MOSFET N-CHANNEL 800V

Quantity:

Delivery:

Payment:

In Stock : 990

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.6815

$1.6815
10

$1.39365

$13.9365
100

$1.109505

$110.9505
500

$0.938828

$469.414

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	78 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3Ohm @ 2.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	D²PAK (TO-263)
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	125W (Tc)
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4.1A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)