Home / Single FETs, MOSFETs / SIHP24N65E-GE3

SIHP24N65E-GE3

Vishay Siliconix

Product No:

SIHP24N65E-GE3

Manufacturer:

Vishay Siliconix

Package:

TO-220AB

Batch:

Datasheet:

Description:

MOSFET N-CH 650V 24A TO220AB

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for SIHP24N65E-GE3, please feel free to contact us. To facilitate the processing of your inquiry, kindly include SIHP24N65E-GE3 and the required quantity in your RFQ. IICSEMI provides the latest quote for SIHP24N65E-GE3 without requiring registration. Latest information on SIHP24N65E-GE3: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs SIHP24N65E-GE3 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2740 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	122 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	145mOhm @ 12A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	250W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	24A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	SIHP24