Home / Single FETs, MOSFETs / SIHP33N60EF-GE3

SIHP33N60EF-GE3

Vishay Siliconix

Product No:

SIHP33N60EF-GE3

Manufacturer:

Vishay Siliconix

Package:

TO-220AB

Batch:

Datasheet:

Description:

MOSFET N-CH 600V 33A TO220AB

Quantity:

Delivery:

Payment:

In Stock : 1000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$5.8235

$5.8235
10

$5.26015

$52.6015
100

$4.35518

$435.518
500

$3.792419

$1896.2095
1000

$3.303074

$3303.074
2000

$3.180742

$6361.484

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for SIHP33N60EF-GE3, please feel free to contact us. To facilitate the processing of your inquiry, kindly include SIHP33N60EF-GE3 and the required quantity in your RFQ. IICSEMI provides the latest quote for SIHP33N60EF-GE3 without requiring registration. Latest information on SIHP33N60EF-GE3: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs SIHP33N60EF-GE3 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3454 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	155 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	98mOhm @ 16.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	278W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	SIHP33