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SIHU4N80AE-GE3

Vishay Siliconix

Product No:

SIHU4N80AE-GE3

Manufacturer:

Vishay Siliconix

Package:

IPAK (TO-251)

Batch:

Datasheet:

Description:

MOSFET N-CH 800V 4.3A IPAK

Quantity:

Delivery:

Payment:

In Stock : 3000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.4725

$1.4725
10

$1.20745

$12.0745
100

$0.93898

$93.898
500

$0.795891

$397.9455
1000

$0.648337

$648.337
2000

$0.610328

$1220.656
5000

$0.581267

$2906.335
10000

$0.554439

$5544.39

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	622 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.27Ohm @ 2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	IPAK (TO-251)
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	69W (Tc)
Series	E
Package / Case	TO-251-3 Long Leads, IPak, TO-251AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4.3A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	SIHU4