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SIHU6N62E-GE3

Vishay Siliconix

Product No:

SIHU6N62E-GE3

Manufacturer:

Vishay Siliconix

Package:

IPAK (TO-251)

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Datasheet:

Description:

MOSFET N-CH 620V 6A IPAK

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	578 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	900mOhm @ 3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	IPAK (TO-251)
Drain to Source Voltage (Vdss)	620 V
Power Dissipation (Max)	78W (Tc)
Series	-
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	SIHU6