Home / Single FETs, MOSFETs / SIHW21N80AE-GE3

SIHW21N80AE-GE3

Vishay Siliconix

Product No:

SIHW21N80AE-GE3

Manufacturer:

Vishay Siliconix

Package:

TO-247AD

Batch:

Datasheet:

Description:

MOSFET N-CH 800V 17.4A TO247AD

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for SIHW21N80AE-GE3, please feel free to contact us. To facilitate the processing of your inquiry, kindly include SIHW21N80AE-GE3 and the required quantity in your RFQ. IICSEMI provides the latest quote for SIHW21N80AE-GE3 without requiring registration. Latest information on SIHW21N80AE-GE3: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs SIHW21N80AE-GE3 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1388 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	235mOhm @ 11A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-247AD
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	32W (Tc)
Series	E
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	17.4A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	SIHW21