Home / Single FETs, MOSFETs / SIR112DP-T1-RE3

SIR112DP-T1-RE3

Vishay Siliconix

Product No:

SIR112DP-T1-RE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Batch:

Datasheet:

Description:

MOSFET N-CH 40V 37.6A/133A PPAK

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for SIR112DP-T1-RE3, please feel free to contact us. To facilitate the processing of your inquiry, kindly include SIR112DP-T1-RE3 and the required quantity in your RFQ. IICSEMI provides the latest quote for SIR112DP-T1-RE3 without requiring registration. Latest information on SIR112DP-T1-RE3: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs SIR112DP-T1-RE3 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4270 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	89 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.96mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.4V @ 250µA
Supplier Device Package	PowerPAK® SO-8
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	5W (Ta), 62.5W (Tc)
Series	TrenchFET® Gen IV
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	37.6A (Ta), 133A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	+20V, -16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SIR112