SIR516DP-T1-RE3
Vishay Siliconix
Product No:
SIR516DP-T1-RE3
Manufacturer:
Package:
PowerPAK® SO-8
Batch:
-
Datasheet:
Description:
N-CHANNEL 100 V (D-S) MOSFET POW
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 1920 pF @ 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 10A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drain to Source Voltage (Vdss) | 100 V |
| Power Dissipation (Max) | 5W (Ta), 71.4W (Tc) |
| Series | TrenchFET® |
| Package / Case | PowerPAK® SO-8 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 16.8A (Ta), 63.7A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Package | Tape & Reel (TR) |
Detail Info
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SIR516DP-T1-RE3 Tags
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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