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SIR586DP-T1-RE3

Vishay Siliconix

Product No:

SIR586DP-T1-RE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Batch:

Datasheet:

Description:

N-CHANNEL 80 V (D-S) MOSFET POWE

Quantity:

Delivery:

Payment:

In Stock : 5830

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.2825

$1.2825
10

$1.05165

$10.5165
100

$0.818045

$81.8045
500

$0.693405

$346.7025
1000

$0.56486

$564.86

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1905 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5.8mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	PowerPAK® SO-8
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	5W (Ta), 71.4W (Tc)
Series	TrenchFET® Gen V
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	20.7A (Ta), 78.4A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Package	Tape & Reel (TR)