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SIS448DN-T1-GE3

Vishay Siliconix

Product No:

SIS448DN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8

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Description:

MOSFET N-CH 30V 35A PPAK1212-8

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1575 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5.6mOhm @ 10A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.3V @ 250µA
Supplier Device Package	PowerPAK® 1212-8
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Series	TrenchFET®
Package / Case	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SIS448