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SIS626DN-T1-GE3

Vishay Siliconix

Product No:

SIS626DN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8

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Description:

MOSFET N-CH 25V 16A PPAK1212-8

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1925 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	9mOhm @ 10A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1.4V @ 250µA
Supplier Device Package	PowerPAK® 1212-8
Drain to Source Voltage (Vdss)	25 V
Power Dissipation (Max)	52W (Tc)
Series	-
Package / Case	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SIS626