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SISA10BDN-T1-GE3

Vishay Siliconix

Product No:

SISA10BDN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8

Batch:

Datasheet:

Description:

N-CHANNEL 30-V (D-S) MOSFET POWE

Quantity:

Delivery:

Payment:

In Stock : 3352

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.8265

$0.8265
10

$0.6783

$6.783
100

$0.527345

$52.7345
500

$0.446956

$223.478
1000

$0.364097

$364.097

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1710 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	36.2 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.6mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.4V @ 250µA
Supplier Device Package	PowerPAK® 1212-8
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	3.8W (Ta), 63W (Tc)
Series	TrenchFET® Gen IV
Package / Case	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	26A (Ta), 104A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	+20V, -16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)