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SISC06DN-T1-GE3

Vishay Siliconix

Product No:

SISC06DN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8

Batch:

Datasheet:

Description:

MOSFET N-CH 30V 27.6A/40A PPAK

Quantity:

Delivery:

Payment:

In Stock : 5991

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.855

$0.855
10

$0.6992

$6.992
100

$0.544065

$54.4065
500

$0.46113

$230.565
1000

$0.375649

$375.649

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2455 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.7mOhm @ 15A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.1V @ 250µA
Supplier Device Package	PowerPAK® 1212-8
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	3.7W (Ta), 46.3W (Tc)
Series	TrenchFET® Gen IV
Package / Case	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	27.6A (Ta), 40A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	+20V, -16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SISC06