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SISH402DN-T1-GE3

Vishay Siliconix

Product No:

SISH402DN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8SH

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 30V 19A/35A PPAK

Quantity:

Delivery:

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Payment:

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In Stock : 30

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.8645

    $0.8645

  • 10

    $0.7068

    $7.068

  • 100

    $0.54948

    $54.948

  • 500

    $0.465747

    $232.8735

  • 1000

    $0.379402

    $379.402

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6mOhm @ 19A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 250µA
Supplier Device Package PowerPAK® 1212-8SH
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 3.8W (Ta), 52W (Tc)
Series TrenchFET®
Package / Case PowerPAK® 1212-8SH
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 35A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SISH402

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