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SISS02DN-T1-GE3

Vishay Siliconix

Product No:

SISS02DN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8S

Batch:

Datasheet:

Description:

MOSFET N-CH 25V 51A/80A PPAK

Quantity:

Delivery:

Payment:

In Stock : 5988

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.387

$1.387
10

$1.13715

$11.3715
100

$0.884165

$88.4165
500

$0.749436

$374.718
1000

$0.610489

$610.489

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4450 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	83 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.2mOhm @ 15A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 250µA
Supplier Device Package	PowerPAK® 1212-8S
Drain to Source Voltage (Vdss)	25 V
Power Dissipation (Max)	5W (Ta), 65.7W (Tc)
Series	TrenchFET® Gen IV
Package / Case	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	51A (Ta), 80A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	+16V, -12V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SISS02