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SISS42DN-T1-GE3

Vishay Siliconix

Product No:

SISS42DN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8S

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Description:

MOSFET N-CH 100V 11.8/40.5A PPAK

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	14.4mOhm @ 15A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.4V @ 250µA
Supplier Device Package	PowerPAK® 1212-8S
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	4.8W (Ta), 57W (Tc)
Series	TrenchFET® Gen IV
Package / Case	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11.8A (Ta), 40.5A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SISS42