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SPB11N60C2

Infineon Technologies

Product No:

SPB11N60C2

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : 300

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

145

$1.976

$286.52

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	41.5 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	380mOhm @ 7A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5.5V @ 500µA
Supplier Device Package	PG-TO263-3-2
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	125W (Tc)
Series	CoolMOS™
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk