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SPB18P06PGATMA1

Infineon Technologies

Product No:

SPB18P06PGATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Batch:

-

Datasheet:

-

Description:

MOSFET P-CH 60V 18.7A D2PAK

Quantity:

Delivery:

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Payment:

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In Stock : 4738

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.349

    $1.349

  • 10

    $1.20745

    $12.0745

  • 100

    $0.94164

    $94.164

  • 500

    $0.777898

    $388.949

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 130mOhm @ 13.2A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Supplier Device Package PG-TO263-3
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 81.1W (Ta)
Series SIPMOS®
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 18.7A (Ta)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number SPB18P06

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