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SPB21N50C3ATMA1

Infineon Technologies

Product No:

SPB21N50C3ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 560V 21A TO263-3

Quantity:

Delivery:

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In Stock : 2140

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.5315

    $4.5315

  • 10

    $4.06885

    $40.6885

  • 100

    $3.334025

    $333.4025

  • 500

    $2.838163

    $1419.0815

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 190mOhm @ 13.1A, 10V
Product Status Not For New Designs
Vgs(th) (Max) @ Id 3.9V @ 1mA
Supplier Device Package PG-TO263-3-2
Drain to Source Voltage (Vdss) 560 V
Power Dissipation (Max) 208W (Tc)
Series CoolMOS™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number SPB21N50

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