Home / Single FETs, MOSFETs / SPB80N06S2L-H5

SPB80N06S2L-H5

Infineon Technologies

Product No:

SPB80N06S2L-H5

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3-2

Batch:

Datasheet:

Description:

MOSFET N-CH 55V 80A TO263-3

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for SPB80N06S2L-H5, please feel free to contact us. To facilitate the processing of your inquiry, kindly include SPB80N06S2L-H5 and the required quantity in your RFQ. IICSEMI provides the latest quote for SPB80N06S2L-H5 without requiring registration. Latest information on SPB80N06S2L-H5: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs SPB80N06S2L-H5 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	6640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	190 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5mOhm @ 80A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 230µA
Supplier Device Package	PG-TO263-3-2
Drain to Source Voltage (Vdss)	55 V
Power Dissipation (Max)	300W (Tc)
Series	OptiMOS™
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SPB80N