Home / Single FETs, MOSFETs / SPI10N10L

SPI10N10L

Infineon Technologies

Product No:

SPI10N10L

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3-1

Batch:

Datasheet:

Description:

MOSFET N-CH 100V 10.3A TO262-3

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for SPI10N10L, please feel free to contact us. To facilitate the processing of your inquiry, kindly include SPI10N10L and the required quantity in your RFQ. IICSEMI provides the latest quote for SPI10N10L without requiring registration. Latest information on SPI10N10L: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs SPI10N10L latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	444 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	154mOhm @ 8.1A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 21µA
Supplier Device Package	PG-TO262-3-1
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	50W (Tc)
Series	SIPMOS®
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10.3A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Base Product Number	SPI10N