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SPI11N65C3HKSA1

Infineon Technologies

Product No:

SPI11N65C3HKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3-1

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Datasheet:

Description:

MOSFET N-CH 650V 11A TO262-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	380mOhm @ 7A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.9V @ 500µA
Supplier Device Package	PG-TO262-3-1
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	125W (Tc)
Series	CoolMOS™
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	SPI11N