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SPP02N60C3IN

Infineon Technologies

Product No:

SPP02N60C3IN

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3-1

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Datasheet:

Description:

N-CHANNEL POWER MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	12.5 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	3Ohm @ 1.1A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.9V @ 80µA
Supplier Device Package	PG-TO220-3-1
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	25W (Tc)
Series	CoolMOS™
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1.8A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk