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SPP08N50C3XKSA1

Infineon Technologies

Product No:

SPP08N50C3XKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3-1

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 560V 7.6A TO220-3

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 600mOhm @ 4.6A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 3.9V @ 350µA
Supplier Device Package PG-TO220-3-1
Drain to Source Voltage (Vdss) 560 V
Power Dissipation (Max) 83W (Tc)
Series CoolMOS™
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 7.6A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number SPP08N

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